Technology Partnership of Nagoya University, Inc.
World Class Research Contributing to Society
Dr. Noritaka USAMI, Ph.D.
Professor
Graduate School of Engineering
Institute of Materials and Systems for Sustainability
Center for Integrated Research of Future Electronics
Nagoya University
Education
1998
Doctor of Engineering The University of Tokyo
1993
Master of Engineering The University of Tokyo
1991
Bachelor of Engineering The University of Tokyo
Work Experience
2013 - Professor
Nagoya University Graduate School of Engineering
2018 - 2020 Senior Science and Technology Policy Fellow
Government of Japan Cabinet Office
2000 - 2013 Associate Professor
Tohoku University Institute for Materials Research
1998 - 1999 Visiting Researcher
Technische Universität Dresden Institüt für Angewandte Photophysik
1994 - 2000 Research Associate
The University of Tokyo Photonic Materials, Research Center
for Advanced Science and Technology
Awards
2018 Silicon PV Award
2017 Innovative PV award JSPS 175th committee on innovative photovoltaic power generation system
2012 Best poster award The 38th IEEE Photovoltaic Specialist Conference
2009 The best paper award The 19th international photovoltaic scientific
engineering conference and exhibition (PVSEC-19)
Selected Publications
Application of Bayesian optimization for improved passivation performance in TiOx/SiOy/c-Si heterostructure by hydrogen plasma treatment
S. Miyagawa, K. Gotoh, K. Kutsukake, Y. Kurokawa, and N. Usami
Applied Physics Express 14, 025503 (2021)
Propagation of Crystal Defects During Directional Solidification of Silicon via Induction of Functional Defects
P. Krenckel, Y. Hayama, F. Schindler, T. Trötschler, S. Riepe, N. Usami
Crystals 11, 90 (2021)
Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation
K. Mitamura, K. Kutsukake, T. Kojima, and N. Usami
Journal of Applied Physics 128, 125103 (2020)
3D visualization of growth interfaces in cast Si ingot using inclusions distribution
S. Kamibeppu, P. Krenckel, T. Trötschler, A. Hess, S. Riepe, and N. Usami
Journal of Crystal Growth 535, 125535 (2020)
3D visualization and analysis of dislocation clusters in multicrystalline silicon ingot by approach of data science
Y. Hayama, T. Matsumoto, T. Muramatsu, K. Kutsukake, H. Kudo, and N. Usami
Solar Energy Materials and Solar Cells 189, 239 (2019)
A full list of publications can be found here
545 articles with 8,001 citations (As of 9 April, 2021)
Hirsch-index 45
Dr. Douglas L. Irving, Ph.D.
Professor
Department of Materials Science and Engineering
North Carolina State University
Bio
Douglas Irving is a University Faculty Scholar, Alumni Distinguished Undergraduate Professor, and Professor in the Department of Materials Science and Engineering at North Carolina State University. He is also affiliated with the Department of Physics at NCSU. He completed his undergraduate studies in Physics at Furman University in 1997. After receiving his Ph.D. in Materials Science and Engineering from the University of Florida in 2004, he conducted postdoctoral research at North Carolina State University. In 2008, he was hired as an assistant professor. His research interests include the use of first principles simulation to predict the electrical, optical, and mechanical properties of inorganic materials. His group has led the development and implementation for informatics approaches for the study of point defects in these materials. In 2012, he received an NSF CAREER award and in 2013 he was made a member of the NCSU Academy of Outstanding Teachers.
Selected Publications
J. N. Baker, P. C. Bowes, J. S. Harris, and D. L. Irving
MRC, vol. 9, no. 3, pp. 839–845, Sep. 2019
Computational approaches to point defect simulations for semiconductor solid solution alloys
K. J. Mirrielees, J. N. Baker, P. C. Bowes, and D. L. Irving
The Journal of Chemical Physics, vol. 154, no. 9, p. 094705, 2021.
Complexes and compensation in degenerately donor doped GaN
J. N. Baker, P. C. Bowes, J. S. Harris, R. Collazo, Z. Sitar, and D. L. Irving
Appl. Phys. Lett., vol. 117, no. 10, p. 102109, Sep. 2020
Site preference of Y and Mn in nonstoichiometric Ba Ti O 3 from first principles
P. C. Bowes, J. N. Baker, and D. L. Irving
Phys. Rev. Materials, vol. 4, no. 8, p. 084601, Aug. 2020
Oxygen and silicon point defects in Al 0.65 Ga 0.35 N
J. S. Harris, B. E. Gaddy, R. Collazo, Z. Sitar, and D. L. Irving
Phys. Rev. Materials, vol. 3, no. 5, p. 054604, May 2019
Space charge control of point defect spin states in AlN
P. C. Bowes, Y. Wu, J. N. Baker, J. S. Harris, and D. L. Irving
Appl. Phys. Lett., vol. 115, no. 5, p. 052101, Jul. 2019
On compensation in Si-doped AlN
J. S. Harris et al
Applied Physics Letters, vol. 112, no. 15, p. 152101, Apr. 2018
Influence of impurities on the high temperature conductivity of SrTiO3
P. C. Bowes, J. N. Baker, J. S. Harris, B. D. Behrhorst, and D. L. Irving
Appl. Phys. Lett., vol. 112, no. 2, p. 022902, Jan. 2018
Defect mechanisms of coloration in Fe-doped SrTiO3 from first principles
J. N. Baker et al
Appl. Phys. Lett., vol. 110, no. 12, p. 122903, Mar. 2017
Professor, Nagoya University
Institute of Materials and Systems for Sustainability
Center for Integrated Research of Future Electronics Innovative Devices Section
Dr. Toru UJIHARA, Ph.D.
Education
2000
PhD in Department of Ｍaterials Science and Engineering, Kyoto University, Japan
Work Experience
2010 -
Nagoya University Professor
2004 - 2010
Nagoya University Associate Professor
1999 - 2004
Tohoku University Assistant Professor